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X‐ray Multiple Diffraction Phenomenon in the Evaluation of Semiconductor Crystalline Perfection
Author(s) -
Morelhão S. L.,
Cardoso L. P.
Publication year - 1996
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889896003986
Subject(s) - misorientation , diffraction , semiconductor , materials science , crystal (programming language) , crystalline silicon , polishing , extinction (optical mineralogy) , bragg's law , silicon , crystallography , optics , condensed matter physics , physics , chemistry , optoelectronics , microstructure , composite material , computer science , grain boundary , programming language
In this work, a method that takes advantage of the three‐dimensional nature of the X‐ray multiple‐diffraction (MD) phenomenon for evaluating the crystalline perfection of semiconductors is proposed. The energy‐transfer process among the MD beams can occur in a kinematical (secondary extinction) or a dynamical (primary extinction) regime. The effects that each regime can have on MD Bragg condition are theoretically investigated. The method provides information on size and misorientation of perfect‐crystal regions as well as on the probability of interaction between them. The perfection of GaAs and Ge (001) surfaces after mechanical and/or chemical polishing has been investigated with this method and, as an extension of its applicability, porous silicon and GaAs (001) with Se ions implanted were also investigated.