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Thin‐Film Study using Low‐Incidence and Bragg–Brentano Texture Goniometry. Application to Mono‐ and Bilayers of Al and Al/Fe
Author(s) -
Tizliouine A.,
Bessières J.,
Heizmann J. J.,
Bobo J. F.
Publication year - 1996
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889896003809
Subject(s) - goniometer , wafer , aluminium , materials science , texture (cosmology) , silicon , bragg peak , layer (electronics) , intensity (physics) , bragg's law , angle of incidence (optics) , thin film , bilayer , composite material , optics , crystallography , metallurgy , diffraction , optoelectronics , chemistry , nanotechnology , beam (structure) , physics , image (mathematics) , biochemistry , membrane , artificial intelligence , computer science
Texture goniometry of thin layers needs intensity corrections in Bragg–Brentano or low‐incidence geometries. These intensity corrections are described for the case where the diffracting volume consists of a single layer or bilayers. As an application, the respective orientations of aluminium thin films deposited on steel and bilayers of aluminium/iron deposited on silicon wafers are studied. The orientation relationship between iron and silicon is (111) Si ||(110) Fe and between aluminium and iron is (111) Al ||(110 Fe ) with [011] Al ||[100] Fe .