Interpreting oscillatory Bragg peak positions

This work describes a detector‐fixed method in which X‐ray photons are collected on different points of the sensitive area of the detector without movement of the detector and which is suitable for measuring a single‐crystal orientation using ( ω, ϕ ) rotations. This method was used to determine the orientation of a silicon wafer whose (100) plane makes a small angle (misorientation angle) with the surface. ω scans of the 400 reflection were measured as a function of ϕ while χ and 2 θ were fixed at 0 and 69°, respectively.