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X‐ray Scattering on Stacking Faults in 123 Crystals Considering Local Changes of Distances between Atomic Layers
Author(s) -
Rud N. D.,
Ustinov A. I.
Publication year - 1996
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889895013434
Subject(s) - stacking , scattering , x ray , crystallography , materials science , atomic physics , molecular physics , physics , computational physics , optics , chemistry , nuclear magnetic resonance
Spatial distribution of X‐ray diffusion scattering intensity conditioned by additional CuO atomic layers [stacking faults (SF)] in the AB 2 Cu 3 O 7 − x (123) structure has been studied within a cinematic approach. Natural laws of difffraction‐pattern changes caused by increase of SF density and by local changes of interplanar distances of atomic layers in the vicinity of SFs were obtained. The X‐ray method for determination of the SF density and local changes of interplanar distances is described.