Premium
A 10 9 Pa high‐pressure cell for X‐ray and optical measurements. Erratum
Author(s) -
Leszczynski M.,
Podlasin S.,
Suski T.
Publication year - 1993
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889893005515
Subject(s) - x ray , equation of state , value (mathematics) , physics , materials science , thermodynamics , crystallography , optics , chemistry , mathematics , statistics
In the paper by Leszczynski, Podlasin & Suski [ J. Appl. Cryst. (1993), 26 , 1–4], the value of the GaAs bulk modulus B 0 = 1.1 (0.2) × 10 11 Pa cited from the paper by Besson, ltie, Polian, Weill, Manssot & Gonzalez [ Phys. Rev. B (1991), 44 , 4214–4234] was misread from the figure. The correct value, as given by Itie [ Phase Transit. (1992), 39 , 81], is B 0 = 0.85 × 10 11 Pa and B ′ = 4.5 in a Murnaghan equation of state.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom