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A 10 9 Pa high‐pressure cell for X‐ray and optical measurements. Erratum
Author(s) -
Leszczynski M.,
Podlasin S.,
Suski T.
Publication year - 1993
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889893005515
Subject(s) - x ray , equation of state , value (mathematics) , physics , materials science , thermodynamics , crystallography , optics , chemistry , mathematics , statistics
In the paper by Leszczynski, Podlasin & Suski [ J. Appl. Cryst. (1993), 26 , 1–4], the value of the GaAs bulk modulus B 0 = 1.1 (0.2) × 10 11 Pa cited from the paper by Besson, ltie, Polian, Weill, Manssot & Gonzalez [ Phys. Rev. B (1991), 44 , 4214–4234] was misread from the figure. The correct value, as given by Itie [ Phase Transit. (1992), 39 , 81], is B 0 = 0.85 × 10 11 Pa and B ′ = 4.5 in a Murnaghan equation of state.