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Dislocation contrast in white‐radiation synchrotron topography of silicon carbide
Author(s) -
Fisher G. R.,
Barnes P.,
Kelly J. F.
Publication year - 1993
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889893004017
Subject(s) - silicon carbide , dislocation , synchrotron radiation , materials science , synchrotron , silicon , contrast (vision) , carbide , optics , crystallography , condensed matter physics , physics , composite material , optoelectronics , chemistry
Dislocation contrast in silicon carbide has been examined using white‐radiation synchrotron topography. It was found that, in the case of dislocation bundles, the existing theory had to be extended to take into account the overlapping of dislocation strain fields. With this modification, the agreement between theory and observation is greatly improved.