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X‐ray diffraction studies of annealed Czochralski‐grown silicon. I. Double‐crystal diffractometry
Author(s) -
Joksch S.,
Zaumseil P.,
Zulehner W.
Publication year - 1993
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889892009956
Subject(s) - silicon , materials science , synchrotron radiation , x ray , crystal (programming language) , diffraction , reflection (computer programming) , crystallography , optics , transmission electron microscopy , single crystal , radiation , chemistry , optoelectronics , physics , nanotechnology , computer science , programming language
X‐ray reflection properties are reported of annealed Czochralski‐grown silicon (ACS) single crystals at photon energies between 8 and 50 keV, studied by double‐ and triple‐crystal diffractometry (DCD and TCD, respectively) and with X‐radiation from sealed‐tube sources. The report is divided into two parts. In this paper (paper I), the results of double‐crystal topography and rocking‐curve measurements are discussed in detail with regard to the application of ACS for the monochromatization of synchrotron X‐radiation in the above‐mentioned energy range. The analysis of the defects which enhance the reflectivity of ACS compared with that of perfect float‐zone‐grown silicon, carried out by TCD measurements and transmission electron microscopy, is presented in the following paper (paper II). [Zaumseil, Joksch & Zulehner (1993). J. Appl. Cryst. 26 , 192–197].