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Grazing‐incidence X‐ray diffraction on ion‐implanted silicon
Author(s) -
Rugel S.,
Wallner G.,
Metzger H.,
Peisl J.
Publication year - 1993
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889892007799
Subject(s) - materials science , amorphous solid , diffraction , silicon , scattering , transmission electron microscopy , annealing (glass) , recrystallization (geology) , ion , crystal (programming language) , molecular physics , amorphous silicon , crystallography , optics , crystalline silicon , chemistry , optoelectronics , nanotechnology , composite material , physics , paleontology , programming language , organic chemistry , computer science , biology
X‐ray diffraction under grazing‐incidence and ‐exit angles was measured on 100 keV Si + ‐implanted silicon. In comparison with model calculations based on dynamical and kinematical scattering theory, depth‐resolved information on the distortions of the crystal lattice is obtained. The thickness of amorphous and damaged crystalline regions, the degree of damage and the extension of the amorphous/crystalline interfaces are determined and are found to be in good agreement with the results of transmission electron microscopy (TEM) measurements. Furthermore, recrystallization after rapid optical annealing at different temperatures has been studied and quantitative results concerning the improvement of crystal structure, the sharpening of interfaces and the decrease in the heavily distorted surface‐layer thickness are obtained.