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Diffuse X‐ray scattering study of sublattice ordering among Group III atoms in In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P
Author(s) -
Yasuami S.,
Koga K.,
Ohshima K.,
Sasaki S.,
Ando M.
Publication year - 1992
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889892002176
Subject(s) - superstructure , reciprocal lattice , stack (abstract data type) , scattering , crystallography , diffraction , transmission electron microscopy , electron diffraction , condensed matter physics , fourier transform , group (periodic table) , x ray crystallography , chemistry , electron scattering , molecular physics , materials science , physics , optics , quantum mechanics , programming language , organic chemistry , computer science , thermodynamics
The intensity of superstructure reflections and associated diffuse scattering from In 0.5 Ga 0.5 P and In 0.5 Al 0.5 P epitaxic layers grown on (001) GaAs substrates was mapped in reciprocal space. The Warren‐Cowley short‐range‐order parameters were obtained through the usual process for evaluating Fourier coefficients. Varying values for the correlation length in different directions indicate how group III atoms stack up in ordered states. The resultant structure with long‐range order confirms the hypothesis made on the basis of electron diffraction and high‐resolution transmission electron microscopy studies.