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Spatial intensity profile of an X‐ray beam reflected from nearly perfect silicon and diffuse scattering measurements
Author(s) -
Entin I. R.,
Khrupa V. I.
Publication year - 1991
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889891002017
Subject(s) - intensity (physics) , silicon , x ray , scattering , optics , beam (structure) , bragg peak , crystal (programming language) , bragg's law , materials science , spatial distribution , perfect crystal , physics , diffraction , condensed matter physics , optoelectronics , geology , remote sensing , vacancy defect , computer science , programming language
The spatial intensity profile of an X‐ray beam reflected by a crystal with microdefects in the Bragg case is considered. A practically pure diffuse component was measured at the tail of the intensity distribution. From these data, static Debye–Waller factors of nearly perfect silicon crystals were obtained.