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Oxygen precipitation in heavily boron‐doped silicon
Author(s) -
Gupta S.,
Messoloras S.,
Schneider J. R.,
Stewart R. J.,
Zulehner W.
Publication year - 1991
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889890013164
Subject(s) - boron , silicon , precipitation , materials science , oxygen , doping , scattering , dislocation , crystallography , composite material , metallurgy , chemistry , optics , optoelectronics , physics , organic chemistry , meteorology
Small‐angle neutron scattering is used to study the precipitation behaviour of dissolved oxygen in dislocation‐free Czochralski‐grown single crystals of silicon doped with boron and compared with those for similar undoped material. The presence of boron dramatically alters the nature of precipitates in silicon. Heat treatment at 1023 K no longer leads to the formation of the large cushion‐shaped precipitates observed in essentially undoped material. The precipitates are much smaller, and do not exhibit any anisotropic small‐angle scattering. Furthermore, the precipitation process is over in less than 24 h. Subsequent treatment at 1323 K leads to the formation of cushion‐shaped regions which are much larger than those formed in the absence of boron.