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Dislocations around scratches and indents on ±(111) surface of gallium arsenide
Author(s) -
Surowiec M. R.,
Leipner H. S.,
Schreiber J.
Publication year - 1989
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889889008940
Subject(s) - materials science , dislocation , cathodoluminescence , transmission electron microscopy , nucleation , crystallography , indentation , condensed matter physics , slip (aerodynamics) , optics , composite material , optoelectronics , chemistry , physics , nanotechnology , organic chemistry , luminescence , thermodynamics
The dislocation configurations around microscratches and indents on ±(111) surfaces of GaAs single crystals were studied by X‐ray transmission topography, scanning electron microscopy in cathodoluminescence mode and high‐voltage transmission electron microscopy. Most of the dislocations generated are loops of screw – B ( g ) or screw – B ( g ) – screw character gliding on {111} slip planes parallel or inclined to the surface. The irregular shape of the extended loops gliding parallel to the B surface is due to interaction with other loops and apparent motion involving a double kink nucleation mechanism. The exhibited configuration of dislocation loops suggests a cross‐slip orientation of the dissociated screw segments. The direction of propagation of dislocations does not depend on the sense of scratching. Grown‐in dislocations are surrounded by a cloud of point defects and they are immobile in contrast to dislocations introduced by indentation.