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On the calculation of diffracted intensities from SiC crystals undergoing 2 H to 6 H transformation by the layer displacement mechanism
Author(s) -
Kabra V. K.,
Pandey D.,
Lele S.
Publication year - 1988
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889888008064
Subject(s) - displacement (psychology) , transformation (genetics) , layer (electronics) , diffraction , sequence (biology) , intensity (physics) , distribution (mathematics) , materials science , physics , crystallography , geometry , optics , chemistry , mathematics , mathematical analysis , composite material , psychology , biochemistry , psychotherapist , gene
Computer simulation of 2 H to 6 H transformation by non‐random insertion of layer displacement faults in a random space and time sequence has been performed. The model employed by Pandey, Lele & Krishna [ Proc. R. Soc. London Ser. A , (1980), 369 , 435–477], which is based on the sequential insertion of layer displacement faults, allows faulting of one‐third of the total number of layers on completion of the transformation. The results of the simulation show that the transformation gets arrested because of the formation of interfaces by the impingement of independently formed 6 H regions and that the fraction of faulted layers which can be inserted is just 0.276. It is shown that these interfaces are such that they do not lead to any broadening of the 6 H reflections common with 2 H . While this is in agreement with the theoretical predictions of Pandey et al ., the diffuse intensity distribution calculated for the arrested state shows significant departures.