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Investigation of (Ga,In)(As,P)/InP single heterostructures by means of extremely asymmetrical Bragg diffraction using synchrotron radiation
Author(s) -
Brühl H.G.,
Pietsch U.,
Lengeler B.
Publication year - 1988
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889888001025
Subject(s) - optics , synchrotron radiation , bragg's law , diffraction , refraction , physics , wavelength , radiation , synchrotron , beam (structure) , materials science , substrate (aquarium) , x ray , geology , oceanography
Synchrotron radiation was used to measure the rocking curves from (Ga,In)(As,P) single layers grown on an InP (100) oriented substrate. The incident angle was varied (changing correspondingly the X‐ray incident‐beam wavelength) in order to measure at extremely asymmetrical Bragg diffraction down to a glancing angle of 0.35°. The measured rocking curves could be interpreted by the semi‐kinematic model of Petrashen [ Fiz. Tverd. Tela (1974). 16 , 2168–2175] with corrections for X‐ray refraction and for the width of the rocking curve from the extended dynamical theory.