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Precise relative X‐ray measurement of the lattice parameter of silicon crystals with growth striations
Author(s) -
Kuběna J.,
Holý V.
Publication year - 1988
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889888000779
Subject(s) - ingot , perpendicular , silicon , materials science , impurity , diffraction , lattice plane , lattice (music) , crystal (programming language) , condensed matter physics , lattice constant , optics , crystallography , molecular physics , geometry , chemistry , physics , reciprocal lattice , composite material , metallurgy , mathematics , organic chemistry , alloy , computer science , acoustics , programming language
The method described in this paper is based on the comparison of distances of lattice planes perpendicular to the surface in a measured sample and in a reference perfect crystal by means of the symmetrical Laue case of X‐ray diffraction. Systematic errors of the method caused by the tilt of the crystals and by the vertical divergence of the incident beam have been analysed thoroughly. From the form of the deformation field in samples cut along the growth axis of an Si ingot it follows that this experimental arrangement is not sensitive to any axial fluctuations of the impurity concentration even if the surface stress relaxation is considered. The method was applied to the investigation of the radial distribution of oxygen atoms in an Si ingot and the presence of a denuded zone near the ingot surface was demonstrated.