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Lattice‐parameter‐difference measurement of heteroepitaxial structures by means of extremely asymmetrical Bragg diffraction
Author(s) -
Pietsch U.,
Borchard W.
Publication year - 1987
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889887087223
Subject(s) - bragg's law , lattice constant , optics , lattice plane , materials science , diffraction , lattice (music) , bragg peak , heterojunction , monocrystalline silicon , condensed matter physics , physics , reciprocal lattice , silicon , optoelectronics , beam (structure) , acoustics
The sensitivity of measurements of the lattice‐parameter difference in monocrystalline heterostructures can be enhanced by use of an extremely asymmetrical diffraction geometry. If the angle of incidence is somewhat higher than the critical angle for total external reflection, the Bragg peak is shifted from the position calculated by kinematic theory. The amount of shift depends on the angle of incidence as well as on the mass density of the material used. For heteroepitaxic structures both the layer and the substrate peaks are shifted but by different amounts. Therefore it becomes possible to characterize layers of totally lattice‐matched structures also.