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Reflection electron microscopy
Author(s) -
Yagi K.
Publication year - 1987
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889887086916
Subject(s) - monolayer , reflection (computer programming) , annealing (glass) , surface reconstruction , electron microscope , materials science , microscopy , electron diffraction , sputtering , reflection high energy electron diffraction , adsorption , low energy electron microscopy , surface (topology) , optics , surface structure , electron , chemistry , nanotechnology , molecular physics , diffraction , thin film , physics , metallurgy , computer science , geometry , mathematics , quantum mechanics , programming language
Reflection electron microscopy (REM) in ultra‐high vacuum (UHV) conditions is reviewed. UHV‐REM can characterize surface structures of monolayer levels such as steps, domains of reconstructed surface structures and their boundaries and these capabilities are used to observe surface dynamic processes such as phase transitions of reconstructed surface structures and adsorbate structures and adsorption processes, oxidations, sublimations and ion‐sputtering and annealing. The method is compared with other surface‐imaging techniques.