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Sensitivity of X‐ray diffractometry for strain depth profiling in III–V heterostructures
Author(s) -
Bensoussan S.,
Malgrange C.,
SauvageSimkin M.
Publication year - 1987
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889887086801
Subject(s) - heterojunction , wavelength , x ray , optics , materials science , reflection (computer programming) , characterization (materials science) , absorption (acoustics) , optoelectronics , physics , computer science , programming language
The use of the fine structure of X‐ray rocking curves for the characterization of the abruptness of heterointerfaces is presented for the particular example of Ga 1− x Al x As/GaAs heterojunctions. The sensitivity of the method is discussed in detail for the 400 reflection with two different wavelengths (1.2378 and 1.5410 Å). It is shown that the conclusions can be extended to other reflections and wavelengths provided that the ratio χ hi /χ hr depending on both the absorption and the strength of the reflection is kept below 10 −1 .