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X‐ray diffraction evidence for transient composition effects in MOVPE multilayer growth for Ga 1− x Al x As alloys
Author(s) -
Bensoussan S.,
Malgrange C.,
SauvageSimkin M.,
N'Guessan K.,
Gibart P.
Publication year - 1987
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889887086795
Subject(s) - metalorganic vapour phase epitaxy , stacking , heterojunction , diffraction , ternary operation , reflection (computer programming) , materials science , epitaxy , x ray , analytical chemistry (journal) , metal , secondary ion mass spectrometry , interference (communication) , thin film , crystallography , layer (electronics) , chemistry , mass spectrometry , optoelectronics , optics , nanotechnology , physics , metallurgy , organic chemistry , chromatography , computer science , programming language , channel (broadcasting) , electrical engineering , engineering
X‐ray rocking‐curve analysis is applied to the detection of artifacts in multilayer epitactic growth of III–V ternary compounds by metal–organic vapour‐phase epitaxy (MOVPE). Transient spikes in the composition result in unwanted additional thin layers whose presence disturbs the interference pattern expected from the designed heterostructures, thus modifying the oscillating part of the reflection profile. X‐ray methods and secondary‐ion mass spectroscopy (SIMS) lead to descriptions of the actual layer stacking in good agreement with each other.