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X‐ray topographic study of dislocation around indents on {111} surfaces of indium antimonide
Author(s) -
Surowiec M. R.,
Tanner B. K.
Publication year - 1987
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s002188988708614x
Subject(s) - dislocation , indium antimonide , bar (unit) , materials science , crystallography , surface (topology) , glide plane , condensed matter physics , plane (geometry) , enhanced data rates for gsm evolution , optics , geometry , composite material , chemistry , geology , physics , optoelectronics , oceanography , mathematics , telecommunications , computer science
The dislocation configurations around microindentations on {111} surfaces of InSb have been studied by transmission X‐ray topography. In all cases, glide on the B ‐type {111} planes only occurs. The most extended dislocation loops occur around A ‐surface indents. Glide occurs on inclined {111} planes and the loops have extended screw segments parallel to the surface. Around B ‐surface indents dislocations glide predominantly on the () plane parallel to the surface. The mobility of these dislocations is about two or three times less than the former type. Direct evidence for the formation of edge dislocation barriers from reactions between dislocations gliding in the () plane is presented.