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Accuracy in X‐ray rocking‐curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation
Author(s) -
Servidori M.,
Cembali F.
Publication year - 1988
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889887011233
Subject(s) - materials science , wafer , silicon , diffraction , vacancy defect , amorphous solid , ion implantation , crystal (programming language) , crystallography , intensity (physics) , ion , dynamical theory of diffraction , molecular physics , optics , optoelectronics , chemistry , physics , organic chemistry , programming language , computer science , acousto optics , diffraction grating
Rocking curves of implanted and annealed silicon wafers obtained from an X‐ray double‐crystal configuration are simulated on the basis of the dynamical theory of diffraction from imperfect crystals. It is shown that after an amorphous‐to‐crystal transition of the surface damaged layer, vacancy‐ and interstitial‐type defects are detected in this layer in distinct regions, provided the experimental intensity profile and its simulation are accurate enough. The results obtained are compared with those predicted by theoretical modelling of defect production under bombardment.