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2Al 4 C 3 SiC: a new intermediate phase in the Al–Si–C system
Author(s) -
Kidwell B. L.,
Oden L. L.,
McCune R. A.
Publication year - 1984
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889884011973
Subject(s) - phase (matter) , crystallography , diffraction , materials science , hexagonal crystal system , x ray crystallography , chemistry , physics , optics , organic chemistry
The new phase, as prepared from the high‐purity elements, is stable between room temperature and 2270 K, but decomposes between 2270 and 2370 K. The crystal symmetry is hexagonal, with a 0 = 3.3127(7), c 0 = 19.242(4) Å, V = 182.9(1) Å 3 , Z = 1, D x = 2.977(2) g cm −3 , Cu Kα radiation ( λ = 1.540600 Å). The JCPDS Diffraction File No. for 2Al 4 C 3 .SiC is 35‐1499.