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Precision interplanar spacing measurements of boron‐doped silicon
Author(s) -
Soares D. A. W.,
Pimentel C. A.
Publication year - 1983
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889883010870
Subject(s) - boron , silicon , doping , materials science , crystallography , lattice (music) , diffusion , lattice constant , czochralski method , analytical chemistry (journal) , diffraction , chemistry , thermodynamics , optics , physics , optoelectronics , organic chemistry , chromatography , acoustics
A study of the lattice parameters of boron‐doped silicon (10 14 −10 19 cm −3 ) grown in (111) and (001) directions by the Czochralski technique has been undertaken. Interplanar spacings ( d ) were measured by the pseudo‐Kossel technique to a precision of 0.001%; different procedures to obtain d and the errors are discussed. The crystallographic planes are found to contract preferentially and the usual study of parameter variation must be made as a function of d . The diffused B particularly contracts the {333} plane, which is more pronounced in high concentrations. An orientation dependence of the diffusion during growth was observed.