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X‐ray diffraction study of the system Ga 2 Se 3 –In 2 Te 3
Author(s) -
GržetaPlenković B.,
Popović S.,
Čelustka B.,
RužićToroš Ž.,
Šantić B.,
Soldo D.
Publication year - 1983
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889883010717
Subject(s) - isostructural , superstructure , diffraction , crystallography , x ray crystallography , materials science , powder diffraction , phase (matter) , bar (unit) , chemistry , crystal structure , optics , thermodynamics , physics , organic chemistry , meteorology
A series of solid solutions in the system (Ga x In 1− x ) 2 (Se x Te 1− x ) 3 , 1 ≥ x ≥ 0, were prepared by direct synthesis from α‐Ga 2 Se 3 and α‐In 2 Te 3 . The samples (powders and single crystals) were examined at room temperature by X‐ray diffraction. In the whole range of concentrations cubic phases of defect zinc‐blende types (ZB) are present. The unit‐cell parameter, a ZB , continuously increases with the In 2 Te 3 content, undergoing an abrupt change at x ≃0.5. In the Ga 2 Se 3 ‐rich region the diffraction lines show complex profiles, similar to the ones of α‐Ga 2 Se 3 and of (Ga x In 1− x ) 2 Se 3 in the Ga‐rich region. In the In 2 Te 3 ‐rich region the diffraction pattern is similar to that of the disordered, β , phase of In 2 Te 3 . In a narrow range from x ≃0.6 to x ≃0.5 a two‐phase region of these phases exists. For small values of x a superstructure appears, with the unit‐cell parameter 3 a ZB , isostructural with the ordered, α, phase of In 2 Te 3 ( F 3 m ). The JCPDS Diffraction File No. for α‐In 2 Te 3 is 33‐1488.