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A high‐temperature deformation stage for X‐ray synchrotron topography. Applications to dislocation mechanisms in silicon
Author(s) -
George A.,
Michot G.
Publication year - 1982
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s002188988201228x
Subject(s) - synchrotron , silicon , dislocation , materials science , deformation (meteorology) , stage (stratigraphy) , x ray , dislocation creep , crystallography , composite material , optics , metallurgy , geology , chemistry , physics , paleontology
A high‐temperature (~ 1070 K) tensile stage operating under controlled atmosphere convenient for X‐ray synchrotron topography is described. Early results of in situ measurements of dislocation velocities in silicon and an observation of dislocations expanding from the tip of a crack under controlled loading conditions are briefly reported.