A uniaxial stress apparatus for single‐crystal X‐ray diffraction on a four‐circle diffractometer: application to silicon and diamond | Zendy

D'Armour H. | Zendy; Denner W. | Zendy; Schulz H. | Zendy; Cardona M. | Zendy

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A uniaxial stress apparatus for single‐crystal X‐ray diffraction on a four‐circle diffractometer: application to silicon and diamond

Author(s) -

D'Armour H.,

Denner W.,

Schulz H.,

Cardona M.

Publication year - 1982

Publication title -

journal of applied crystallography

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.429

H-Index - 162

ISSN - 1600-5767

DOI - 10.1107/s0021889882011698

Subject(s) - goniometer , diffractometer , materials science , lattice constant , optics , silicon , diffraction , differential stress , stress (linguistics) , crystallography , crystal (programming language) , intensity (physics) , condensed matter physics , composite material , physics , optoelectronics , scanning electron microscope , chemistry , linguistics , philosophy , deformation (meteorology) , computer science , programming language

An apparatus for applying uniaxial stress to a single‐crystal has been constructed. The stress is produced by turning a differential screw and is measured by a strain gauge. The device fits on a goniometer of a four‐circle diffractometer and can rotate around all three axes of the goniometer without restrictions. The lattice constants of Si stressed along [111] were measured and compared with ultrasonically measured elastic constants. The internal stress parameter ξ was calculated from changes of the intensity of the 600 reflection: ξ = 0.74 ± 0.04, larger than the value generally accepted (ξ = 0.64 ± 0.04). The implications of this unexpected result are discussed.

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