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A new CeO 2 form obtained as oxidation product of CeO 2 +SiO 2 ‐doped hot‐pressed silicon nitride
Author(s) -
Celotti G.,
Babini G. N.,
Bellosi A.,
Vincenzini P.
Publication year - 1982
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889882011340
Subject(s) - materials science , silicon nitride , doping , silicon , nitride , diffraction , texture (cosmology) , phase (matter) , silicate , hexagonal crystal system , chemical engineering , analytical chemistry (journal) , crystallography , composite material , optoelectronics , optics , layer (electronics) , chemistry , image (mathematics) , physics , organic chemistry , chromatography , artificial intelligence , computer science , engineering
By using data from the Wallace & Ward [ J. Appl. Cryst . (1975), 8 , 255–260] cylindrical texture camera integrated with other traditional X‐ray powder film techniques for very low and very high diffraction angles, a new high‐temperature modification of CeO 2 was identified and indexed resulting in a trigonal or hexagonal unit cell with a = 8.36(2) and c = 10.42(2) Å, (axial ratio 1.264) and Z = 16. The new phase is an oxidation product of CeO 2 ‐doped hot‐pressed silicon nitride. It can be quenched to room temperature under appropriate conditions. Its stability on reheating is strictly related to its interaction with the silicate phase.