Lattice‐parameter studies on V 0.977 Mo 0.023 O 2  the vicinity of the semiconductor‐to‐metal transition | Zendy

Kucharczyk D. | Zendy; Niklewski T. | Zendy

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Lattice‐parameter studies on V 0.977 Mo 0.023 O 2 the vicinity of the semiconductor‐to‐metal transition

Author(s) -

Kucharczyk D.,

Niklewski T.

Publication year - 1981

Publication title -

journal of applied crystallography

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.429

H-Index - 162

ISSN - 1600-5767

DOI - 10.1107/s0021889881008911

Subject(s) - diffractometer , semiconductor , lattice (music) , transition metal , materials science , lattice constant , phase transition , condensed matter physics , metal , crystallography , chemistry , crystal structure , physics , diffraction , metallurgy , optics , biochemistry , optoelectronics , acoustics , catalysis

The lattice parameters of V 0.977 Mo 0.023 0 2 in the vicinity of the semiconductor‐to‐metal phase transition have been determined with a Bond‐type diffractometer. The transition extends over a temperature range of 0.1 K; and the concomitant volume change, 0.142%, is more than three times as large as that of pure VO 2 .

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