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Détermination précise de la composition de couches epitaxiées Ga 1− x In x P (0≤ x ≤0,10)
Author(s) -
Etcheberry A.,
Marbeuf A.,
Rommeluere M.,
Rioux J.
Publication year - 1980
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s002188988001268x
Subject(s) - electron microprobe , solid solution , chemical composition , materials science , analytical chemistry (journal) , lattice constant , crystallography , condensed matter physics , chemistry , physics , thermodynamics , mineralogy , optics , diffraction , chromatography , metallurgy
The chemical composition of Ga 1− x In x P (0 ≤ x ≤ 0.10) alloys epitaxically grown on GaP substrates has been determined by electron microprobe analysis and by lattice‐parameter measurement ( a ). The a ( x ) calibration curve follows Vegard's law which confirms the regular character of the solid solution and the existence of strain relaxation in the epitaxic layers.