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X‐ray diffraction study of the structural change from 2 H to 4 H in CdI 2 crystals
Author(s) -
Minagawa T.
Publication year - 1978
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889878013242
Subject(s) - diffraction , stacking , crystallography , x ray crystallography , materials science , atmospheric temperature range , x ray , range (aeronautics) , optics , physics , condensed matter physics , chemistry , nuclear magnetic resonance , composite material , thermodynamics
The structural changes, 2 H → faulted 2 H → faulted 4 H → 4 H , in CdI 2 crystals, which are caused by successive heat treatments, were studied by X‐ray diffraction. The faulted 2 H and faulted 4 H structures, which give diffraction patterns composed of sharp spots and diffuse streaks, were solved on the assumption that sharp spots arise from the `average structure' and diffuse streaks from a stacking disorder of layers. It was revealed that (1) each of the faulted 2 H and faulted 4 H structures is maintained unchanged over a certain range of heating temperature and (2) when two kinds of layer, V and V ′, are stacked in the faulted structures, a small number of V ′ layers are always followed by a large number of V layers.