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Etude du polytypisme des cristaux de carbure de silicium par diffraction électronique par réflexion
Author(s) -
Michel P.,
Gauthier J. P.,
Riwan R.
Publication year - 1976
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889876011412
Subject(s) - electron diffraction , crystallography , materials science , diffraction , silicon carbide , reflection high energy electron diffraction , optics , chemistry , physics , metallurgy
Some polytypes of silicon carbide are studied by means of reflexion electron diffraction (RHEED). This simple method allows a wide investigation over the whole surface of large crystals. Reciprocal lattice planes of well known basic polytypes and of intermediate regions between them are recorded. `Forbidden' extra spots characterizing the polytypic structure appear from multiple interactions. Examples of localized long‐period or disordered polytypes are shown. A new 441 R polytype has been found.