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On the dielectric behaviour of cadmium iodide polytypes
Author(s) -
Fernandez A. M.,
Srivastava O. N.
Publication year - 1975
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889875011533
Subject(s) - iodide , cadmium , dielectric , stacking , polarizability , chemistry , crystallography , silver iodide , materials science , inorganic chemistry , molecule , organic chemistry , optoelectronics , layer (electronics) , silver halide
The dielectric constants (ɛ r ) of cadmium iodide polytypes have been measured and found to be higher than that of the parent 4 H structure. For example, whereas the ɛ r for polytypic structures 32 H and 34 H is between 120 and 150, for the 4 H structure it is between 20 and 25. A possible explanation for this decrease is suggested in terms of the occurrence of the stacking faults and their effect on the orientation polarizability of the cadmium iodide crystals.