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A new X‐ray diffraction‐fluorescence method for the study of films: preliminary results for Cu x S on CdS
Author(s) -
Schultz J. M.
Publication year - 1975
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889875010552
Subject(s) - diffraction , fluorescence , yield (engineering) , x ray crystallography , analytical chemistry (journal) , materials science , crystal (programming language) , layer (electronics) , x ray , angle of incidence (optics) , crystallography , x ray fluorescence , optics , chemistry , nanotechnology , physics , chromatography , computer science , metallurgy , programming language
The structure of an ion‐exchanged layer of Cu x S on CdS has been studied by an X‐ray method which yields diffraction and fluorescence results simultaneously. The method utilized a solid‐state Ge crystal detector and a low incidence angle for the X‐ray beam. From the fluorescence yield one can estimate the expected diffraction contribution of the surface film. The diffraction results indicated the presence of both chalcocite (Cu 2 S) and djurleite (Cu 1.96 S). A reversible phase transition near 100°C was observed.