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Electron diffraction pattern of crystal foils containing a high density of point‐defect agglomerates
Author(s) -
Wilkens M.,
Urban K.,
Katerbau K.H.
Publication year - 1975
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889875010369
Subject(s) - agglomerate , materials science , nickel , crystallographic defect , copper , atom (system on chip) , diffraction , electron , crystal (programming language) , irradiation , electron density , electron diffraction , molecular physics , atomic physics , crystallography , optics , chemistry , physics , composite material , metallurgy , programming language , quantum mechanics , computer science , nuclear physics , embedded system
It has been shown that during irradiation at voltages above the threshold voltage for atomic displacements an extremely high density of small point‐defect agglomerates (PDA) is produced in nickel and copper specimens. If the nominal displacements per atom exceed about 5 × 10 −2 the contrasts of the PDA overlap to such an extent that they can no longer be resolved on the micrographs.