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X‐ray diffuse scattering from silicon containing oxygen clusters
Author(s) -
Patel J. R.
Publication year - 1975
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889875010059
Subject(s) - scattering , silicon , asymmetry , transmission electron microscopy , bragg's law , crystal (programming language) , materials science , diffuse reflection , molecular physics , x ray , dislocation , crystallographic defect , wide angle x ray scattering , intensity (physics) , optics , atomic physics , small angle neutron scattering , chemistry , crystallography , neutron scattering , diffraction , physics , optoelectronics , quantum mechanics , computer science , programming language
X‐ray diffuse scattering has been observed in silicon crystals containing oxygen clusters. The crystals were initially dislocation free and the clustering was produced by a heat treatment at 950°C for 5 h. Since defect sizes are relatively large, measurements were made in a double‐crystal spectrometer close to Bragg reflections of about 2′′ halfwidth. From the angular dependence of the diffuse scattering we estimate the average defect size to be about 2000 Å. In addition a very noticeable asymmetry in the diffuse scattering was observed with much higher intensities at the high‐angle tail of the Bragg reflection. Very marked changes in the intensity of the anomalous transmission of X‐rays in silicon have previously been observed following similar treatment. The defects responsible for the observed anomalous transmission and diffuse scattering effects have been characterized by X‐ray topography and electron microscopy. The asymmetry of the diffuse scattering observed is consistent with the direct determination of the interstitial nature of the defects produced after clustering.