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Pressure‐induced change in the long‐period stacking sequence of the close‐packed layers in Mg 3 In
Author(s) -
Iwasaki H.,
Watanabe Y.,
Ogawa S.
Publication year - 1974
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889874010533
Subject(s) - stacking , crystallography , sequence (biology) , alloy , crystal structure , diffraction , materials science , electron diffraction , ternary operation , atmospheric pressure , period (music) , chemistry , metallurgy , geology , physics , optics , biochemistry , programming language , oceanography , organic chemistry , computer science , acoustics
Samples of the alloy Mg 3 In were annealed at 200–250°C in the Bridgman–anvil‐type press under pressures between 20 and 100 kbar. After being quenched to ambient pressure and temperature, the crystal structure was studied by X‐ray diffraction. The number of close‐packed layers in one repeating unit of the alloy structure is twelve with the stacking sequence (3) 3 when annealed under the atmospheric pressure, but at 20, 35 and 55 kbar it increases to eighteen with the sequence (31) 3 , and at 75 and 100 kbar a 24‐layered structure with the sequence (311) 3 has been found to form. The pressure‐induced change in the layer‐stacking sequence in Mg 3 In is similar to the change with the decrease in the electron‐atom ratio previously observed for the ternary alloys Mg 3 (In 1− x , Cd x ).