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Röntgentopographische und elektronenmikroskopische Untersuchung der Realstruktur von γ‐In 2 S 3 ‐kristallen
Author(s) -
Buck P.
Publication year - 1973
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s002188987300796x
Subject(s) - crystallography , burgers vector , stacking , indium , electron microscope , materials science , dissociation (chemistry) , dislocation , crystallographic defect , chemistry , optics , physics , metallurgy , organic chemistry
Crystals of 7‐In 2 S 3 , a new modification of indium sulphide, grown by vapour transport, were studied by X‐ray topography (Lang technique) and electron microscopy. The most frequent defects are dislocations with Burgers vector of the type b = [100]. Growth layers were also observed. Neither the dissociation of dislocations into partials nor any stacking faults could be detected. γ‐In 2 S 3 gradually decomposes in the electron microscope by loss of sulphur. This results in an agglomeration of point defects leading to stacking faults surrounded by dislocation loops with b parallel to [001].