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X‐ray study of small dislocation loops in thermally oxidized silicon
Author(s) -
Kawado S.,
Maruyama T.
Publication year - 1972
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889872009513
Subject(s) - hillock , burgers vector , perpendicular , silicon , materials science , dislocation , x ray , crystallography , lattice (music) , optics , condensed matter physics , transmission electron microscopy , molecular physics , geometry , chemistry , physics , composite material , optoelectronics , mathematics , acoustics
Lattice defects in thermally oxidized silicon waters have been investigated by X‐ray transmission topography. Many dotted lattice defect images were observed in the X‐ray topographs. From observation of the variation in the image contrast between reflecting planes, it was found that these defects have a principal displacement along one of the 〈111〉 directions and another small displacement component perpendicular to this direction. The surfaces of the specimens were chemically etched in Sirtl solution after X‐ray topography. Etch hillocks were found to be loops and half loops in the optical micrographs. One‐to‐one correspondence was found to exist between the etch hillocks and the X‐ray images of defects. It was concluded that the defects are small dislocation loops and half loops lying on one of {111} planes and having a Burgers vector a /3 〈111〉 normal to the plane. The shapes and the contrasts of Observed X‐ray images were well explained by the displacement around a partial dislocation of edge type.