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Electron diffraction effects in silicon carbide. I. Pure polytypes. II. whiskers
Author(s) -
Gibbon D. L.
Publication year - 1971
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889871006435
Subject(s) - diffraction , reciprocal lattice , electron diffraction , materials science , electron backscatter diffraction , selected area diffraction , silicon carbide , crystallography , whiskers , electron , hexagonal crystal system , molecular physics , condensed matter physics , optics , chemistry , physics , composite material , quantum mechanics
Pure samples of the three most common hexagonal SiC polytypes have been examined in transmission electron diffraction. The diffraction patterns from the most densely populated planes in reciprocal space, the ( h 0 l )* planes, differ considerably from the calculated patterns. The difference can be attributed to ubiquitous multiple diffraction. Calculated intensity distributions for 100 kV electrons are given for 4 H , 6 H , and 15 R SiC. SiC whiskers have also been examined, and the unusual diffraction effects seen can, in general, be explained as a combination of ( a ) extreme disorder, ( b ) distorted lattices and ( c ) multiple diffraction.