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An X‐ray test of the polarity of silicon carbide crystals
Author(s) -
Wallace C. A.
Publication year - 1970
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889870006374
Subject(s) - silicon carbide , silicon , polarity (international relations) , reflection (computer programming) , etching (microfabrication) , materials science , dispersion (optics) , crystallography , carbide , polar , carbon fibers , crystal (programming language) , crystalline silicon , optics , molecular physics , nanotechnology , chemistry , optoelectronics , composite material , physics , computer science , composite number , biochemistry , layer (electronics) , astronomy , cell , programming language
Silicon carbide is a polar crystal consisting, in all its structural modifications, of identical networks of silicon and carbon atoms mutually displaced along the c axis. Opposite surfaces are formed by either silicon or carbon layers. The sense of the crystallographic polarity may be determined by means of the small X‐ray anomalous dispersion effect. In order to minimize the experimental errors a simultaneous reflection technique has been devised using photographic recording. The results are consistent with theory and agree with those given by etching.