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Growth of β‐silicon carbide on silicon
Author(s) -
Brown A. S.,
Watts B. E.
Publication year - 1970
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889870005873
Subject(s) - silicon carbide , silicon , materials science , ethylene , carbide , nanocrystalline silicon , crystallography , chemical engineering , mineralogy , nanotechnology , chemical physics , metallurgy , crystalline silicon , chemistry , organic chemistry , amorphous silicon , engineering , catalysis
The structure and topography have been examined of β‐SiC layers formed on silicon heated in a low pressure of ethylene in an ultra‐high vacuum system. Particulate epitaxic growth has been observed on substrates of various low‐index orientations and an unusual double epitaxic relationship on (110) substrates noted.