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An X‐ray multiple diffraction study of crystals of arsenic‐doped germanium
Author(s) -
Isherwood B. J.,
Wallace C. A.
Publication year - 1970
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889870005666
Subject(s) - arsenic , germanium , lattice constant , alloy , diffraction , doping , materials science , lattice (music) , analytical chemistry (journal) , x ray crystallography , crystallography , electrical resistivity and conductivity , crystal structure , chemistry , silicon , metallurgy , optics , physics , optoelectronics , chromatography , quantum mechanics , acoustics
An X‐ray multiple diffraction technique has been used to investigate the effect on the lattice of single‐crystal germanium of the introduction of arsenic at a concentration of approximately 10 20 atoms cm −3 . Two samples, of similar resistivity, have been examined: one in which arsenic was introduced via the melt during Czochralski growth, and one into which arsenic was diffused after growth. X‐ray fluorescence spectroscopy revealed that the latter had an arsenic concentration two or three times that of the `alloy'. The lattice parameter at 25 °C of the Ge–As alloy was found to be 5.65795 Å, that of the As‐diffused Ge, 5.65820 Å, compared with 5.65750 Å as determined for pure Ge, the experimental errors being ±0.00003 Å. The As‐diffused sample was also found to exhibit a considerably higher degree of inhomogeneous strain than the alloy. A brief discussion is given of the possible correlations between arsenic concentration and the observed expansion and strain content of the germanium lattice.