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Electron‐induced decomposition of tin(IV) sulphide in the electron microscope controlled by epitaxy on inner lattice planes
Author(s) -
Günter J. R.,
Oswald H. R.
Publication year - 1969
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889869006972
Subject(s) - tin , tetragonal crystal system , epitaxy , thermal decomposition , sulfide , decomposition , electron microscope , electron , hexagonal crystal system , crystallography , materials science , lattice constant , chemistry , lattice (music) , analytical chemistry (journal) , inorganic chemistry , crystal structure , nanotechnology , diffraction , metallurgy , optics , physics , organic chemistry , layer (electronics) , quantum mechanics , acoustics
Electron microscope experiments show that the mechanism of electron‐induced decomposition of tin(IV) sulfide differs from that of thermal decomposition. Hexagonal tin(IV) sulfide is converted to tetragonal tin in three equivalent orientations with [100] Sn parallel to [100] SnS2 and [001] Sn parallel to [001] SnS2 . Experiments on epitaxic growth of tin on tin(IV) sulfide (001) surfaces and theoretical considerations of relative interface energies show that the reaction is controlled by epitaxy and not by a three‐dimensional relation between the two lattices.