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Revised X‐ray diffraction line intensities for silicon carbide polytypes
Author(s) -
Hannam A. L.,
Shaffer P. T. B.
Publication year - 1969
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889869006510
Subject(s) - silicon carbide , materials science , diffraction , crystallography , x ray , silicon , line (geometry) , carbide , intensity (physics) , x ray crystallography , powder diffraction , optics , chemistry , optoelectronics , physics , metallurgy , geometry , mathematics
Revised intensity relationships for the three common silicon carbide polytypes (6 H , 4 H and 15 R ) are presented together with the details of a technique by which pure polytype samples may be prepared.