Premium
Revised X‐ray diffraction line intensities for silicon carbide polytypes
Author(s) -
Hannam A. L.,
Shaffer P. T. B.
Publication year - 1969
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889869006510
Subject(s) - silicon carbide , materials science , diffraction , crystallography , x ray , silicon , line (geometry) , carbide , intensity (physics) , x ray crystallography , powder diffraction , optics , chemistry , optoelectronics , physics , metallurgy , geometry , mathematics
Revised intensity relationships for the three common silicon carbide polytypes (6 H , 4 H and 15 R ) are presented together with the details of a technique by which pure polytype samples may be prepared.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom