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Profile analysis of random‐layer lines
Author(s) -
Perret R.,
Ruland W.
Publication year - 1968
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889868005455
Subject(s) - polyacrylonitrile , layer (electronics) , materials science , nanotechnology , composite material , polymer
Ruland's theory of profile analysis for random‐layer lines has been applied to a heat‐treatment series of non‐graphitizing C atoms from polyacrylonitrile. It is shown that size and disorder effects can be separated. The results indicate that lattice defects are reduced at higher temperatures, but that layer growth is strongly inhibited so that even after heating to 3000°C the average layer size is only about 60 Å.