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Diffusion anomale des rayons X par des semiconducteurs de structure type blende
Author(s) -
Schiller C.,
Jarrousse B.
Publication year - 1968
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889868005108
Subject(s) - semiconductor , diffusion , type (biology) , polarity (international relations) , materials science , physics , condensed matter physics , crystallography , chemistry , optoelectronics , quantum mechanics , ecology , biochemistry , cell , biology
By the use of the continuous X‐ray spectrum it is possible to determine the polarity of semiconductors of the blende type. Close to the absorption edges, the scattered intensities are different for (111) and () faces.