Premium
Strain distribution in an Si single crystal measured by interference fringes of X‐ray mirage diffraction
Author(s) -
Jongsukswat Sukswat,
Fukamachi Tomoe,
Ju Dongying,
Negishi Riichirou,
Hirano Keiichi,
Kawamura Takaaki
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813019067
Subject(s) - diffraction , crystal (programming language) , distortion (music) , optics , interference (communication) , position (finance) , strain (injury) , materials science , plane (geometry) , x ray crystallography , single crystal , distribution (mathematics) , x ray , crystallography , physics , molecular physics , condensed matter physics , geometry , chemistry , mathematics , mathematical analysis , channel (broadcasting) , cmos , amplifier , computer science , engineering , medicine , programming language , optoelectronics , finance , electrical engineering , economics
In X‐ray interference fringes accompanied by mirage diffraction, variations have been observed in the spacing and position of the fringes from a plane‐parallel Si single crystal fixed at one end as a function of distance from the incident plane of the X‐rays to the free crystal end. The variations can be explained by distortion of the sample crystal due to gravity. From the variations and positions of the fringes, the strain gradient of the crystal has been determined. The distribution of the observed strain agrees with that expected from rod theory except for residual strain. When the distortion is large, the observed strain distribution does not agree with that expected from rod theory.