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Computer studies on reflection high‐energy electron diffraction from the growing surface of Ge(001)
Author(s) -
Mitura Zbigniew
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813012995
Subject(s) - electron diffraction , scattering , reflection (computer programming) , diffraction , symmetry (geometry) , computational physics , experimental data , electron , electron scattering , physics , surface (topology) , condensed matter physics , optics , materials science , quantum mechanics , mathematics , computer science , geometry , statistics , programming language
The results of calculations of reflection high‐energy electron diffraction intensities, measured at different stages of the homoepitaxial growth of Ge(001), are described. A two‐dimensional Bloch wave approach was used in calculations of the Schrödinger equation with a one‐dimensional potential. The proportional model was used for partially filled layers, i.e. the scattering potential was taken to be proportional to the coverage and the potential of the fully filled layer. Using such an approach, it was shown that it is possible to obtain valuable information for the analysis of experimental data. The results of these calculations were compared with data for off‐symmetry azimuths from the literature, and satisfactory agreement between the theoretical and experimental data was found. Also assessed was whether developing more advanced models ( i.e. going beyond the proportional model), to make a more detailed account of the diffuse scattering, might be important in achieving a fully quantitative explanation of the experimental data.