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Characterization of SiGe thin films using a laboratory X‐ray instrument
Author(s) -
Ulyanenkova Tatjana,
Myronov Maksym,
Benediktovitch Andrei,
Mikhalychev Alexander,
Halpin John,
Ulyanenkov Alex
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s0021889813010492
Subject(s) - reciprocal lattice , materials science , characterization (materials science) , epitaxy , scattering , dislocation , x ray , diffraction , optics , thin film , x ray crystallography , layer (electronics) , crystallography , physics , composite material , nanotechnology , chemistry
The technique of reciprocal space mapping using X‐rays is a recognized tool for the nondestructive characterization of epitaxial films. X‐ray scattering from epitaxial Si 0.4 Ge 0.6 films on Si(100) substrates using a laboratory X‐ray source was investigated. It is shown that a laboratory source with a rotating anode makes it possible to investigate the material parameters of the super‐thin 2–6 nm layers. For another set of partially relaxed layers, 50–200 nm thick, it is shown that from a high‐resolution reciprocal space map, conditioned from diffuse scattering on dislocations, it is possible to determine quantitatively from the shape of a diffraction peak (possessing no thickness fringes) additional parameters such as misfit dislocation density and layer thickness as well as concentration and relaxation.