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A new technique to grow incongruent melting Ga:YIG crystals: the edge‐defined film‐fed growth method
Author(s) -
Zhuang Naifeng,
Chen Wenbing,
Shi Lijun,
Nie Jianbiao,
Hu Xiaolin,
Zhao Bin,
Lin Shukun,
Chen Jianzhong
Publication year - 2013
Publication title -
journal of applied crystallography
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.429
H-Index - 162
ISSN - 1600-5767
DOI - 10.1107/s002188981301025x
Subject(s) - materials science , yttrium iron garnet , curie temperature , crystal (programming language) , crystal growth , yttrium , dopant , enhanced data rates for gsm evolution , czochralski method , congruent melting , crystallography , analytical chemistry (journal) , condensed matter physics , optoelectronics , doping , chemistry , metallurgy , ferromagnetism , oxide , telecommunications , physics , organic chemistry , phase (matter) , chromatography , phase diagram , computer science , programming language
Crystalline yttrium iron garnet (YIG) is an important magneto‐optical material. However, this crystal is an incongruent melting compound. As is well known, compared to the crystal growth of a congruent melting compound by using the Czochralski method, the crystal growth of an incongruent melting compound is more difficult. In this work, a system for growing Ga:YIG single crystals by the edge‐defined film‐fed growth (EFG) method was designed and constructed, and the mechanism of crystal growth was also preliminarily studied. The Ga 3+ dopant concentration, the Curie temperature and the transmission spectra of as‐grown crystals were investigated to evaluate their potential application in magneto‐optical devices. The success of growing Ga:YIG crystals by the EFG method provides a new way to grow other incongruent melting compounds.